Our lab consists of two dedicated spaces housed in the lower levels of the Pettit Microelectronics Research Center (MIRC): one for electrical measurement and characterization and the other for materials growth (equipped with molecular beam epitaxy-pulsed laser deposition (PLD-MBE) system). Besides, we heavily utilize the clean-room facilities at the Institute of Electronics and Nanotechnology (IEN) and the materials characterization facilities at the Institute of Materials (IMAT) of Georgia Tech.

The measurement lab consists of a 600 sq. ft. space (Pettit 152) and is currently equipped with a Cascade Summit 12000B-M Semi-automatic Probe Station with hot chuck (25-300 ^oC),  Infiniium S Series DSOS104A High-Definition Oscilloscopes, Keysight 81150A Pulse-/Function-/Arbitrary Generators, a Keysight E4990A  Impedance Analyzer, an aixACCT TF-3000 Ferroelectric tester, Keysight B1500 Semiconductor Parameter Analyzer with a pulse IV module and 4 medium power SMUs, DC power sources, multimeters, soldering equipment, electronic components, and a chemical fume hood.

Panoramic view of the measurement lab at the Pettit Microelectronics Research Center.

The materials growth lab is located in Pettit 040 and consists of a 450 sq. ft. space. It is equipped with a Twente Solid State Technology (TSST) Pulsed Laser Deposition (PLD) system for high-quality, epitaxial growth of complex oxides. The constituent high pressure, in-situ Reflection high-energy electron diffraction (RHEED) system (Torr-RHEED system from STAIB) allows for control of material growth at a monolayer level. Automated 6-target carousel with computer controlled target rastering, target selection and target rotation features for the deposition of single layers, multilayers and superlattices. The laser ablation of the ceramic targets is performed by a pulsed excimer laser (248 nm KrF) from LightMachinery, Inc (model IPEX-700).